phase change memory Last modified: Tuesday, April 08, 2008
Abbreviated as PCM, phase change memory is a type of non-volatile memory that is much faster than the common flash memory, from 500 to 1,000 times faster, and it also uses up to one half the power. Phase change memory uses a semiconductor alloy that can be changed rapidly between an ordered, crystalline phase having lower electrical resistance to a disordered, amorphous phase with much higher electrical resistance. Because no electrical power is required to maintain either phase of the material, so phase-change memory is non-volatile.
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