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90 nanometer is the buzzword of choice (2000-2004) for an advanced
semiconductor manufacturing process that combines higher-performance,
lower-power transistors, strained silicon, high-speed copper interconnects and
low-k dielectric material. Some of the new technologies in 90 nm are strained
silicon which causes one type of transistor to switch faster, low-power
transistors which are only 50 nm in size, and seven layers of copper
interconnects which provide a cost-effective improvement in logic density. The
low-k insulator between each of the copper interconnect layers reduces wire to
wire capacitance.
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